Factory Lead Time  

12 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-247-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

30A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

214W Tc

Turn Off Delay Time  

41 ns

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

HEXFET®

Published  

2009

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

75MOhm

Terminal Finish  

MATTE TIN OVER NICKEL

Additional Feature  

AVALANCHE RATED, HIGH RELIABILITY

Peak Reflow Temperature (Cel)  

250

Time@Peak Reflow Temperature-Max (s)  

30

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

214W

Turn On Delay Time  

14 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

75m Ω @ 18A, 10V

Vgs(th) (Max) @ Id  

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

2159pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

123nC @ 10V

Rise Time  

43ns

Vgs (Max)  

±20V

Fall Time (Typ)  

33 ns

Continuous Drain Current (ID)  

30A

Threshold Voltage  

4V

JEDEC-95 Code  

TO-247AC

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

200V

Height  

21.1mm

Length  

16.129mm

Width  

5.2mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free